CEA-Leti has developed a 200 mm gallium nitride/silicon (GaN/Si) process technology compatible with complementary metal-oxide-semiconductor (CMOS) cleanrooms that preserves the high performance of the semiconductor material and costs less than existing GaN/SiC technology. In one of nine presentations at IEDM 2023, the institute said that current GaN high-electron-mobility-transistor (HEMT) technologies used in telecom or radar…
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